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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet CSICD10-1200 Datasheet
Standard Package 1
Manufacturer Central Semiconductor Corp
Series -
Packaging Cut Tape (CT)
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 250µA @ 1200V
Capacitance @ Vr, F 500pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction -55°C ~ 175°C
C4D02120E
Cree/Wolfspeed, Diode Silicon Carbide Schottky 1200V 10A (DC) Surface Mount TO-252-2, Z-Rec®
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C4D20120D
Cree/Wolfspeed, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 16A Through Hole TO-247-3, Z-Rec®
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LSIC2SD120D20
Littelfuse Inc., Diode Silicon Carbide Schottky 1200V 54.5A (DC) Surface Mount TO-263-2L, Gen2
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C4D10120A
Cree/Wolfspeed, Diode Silicon Carbide Schottky 1200V 33A (DC) Through Hole TO-220-2, Z-Rec®
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SCS220AE2HRC
Rohm Semiconductor, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-247-3, Automotive, AEC-Q101
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C3D10065E
Cree/Wolfspeed, Diode Silicon Carbide Schottky 650V 32A (DC) Surface Mount TO-252-2, Z-Rec®
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FFSM1265A
ON Semiconductor, Diode Silicon Carbide Schottky 650V 12.5A (DC) Surface Mount 4-PQFN (8x8),
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FFSD1065A
ON Semiconductor, Diode Silicon Carbide Schottky 650V 18A (DC) Surface Mount D-PAK (TO-252),
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STPSC10H12CWL
STMicroelectronics, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 19A Through Hole TO-247-3, ECOPACK®
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C3D06060G
Cree/Wolfspeed, Diode Silicon Carbide Schottky 600V 19A (DC) Surface Mount TO-263-2, Z-Rec®
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C3D06065E
Cree/Wolfspeed, Diode Silicon Carbide Schottky 650V 20A (DC) Surface Mount TO-252-2, Z-Rec®
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C3D16065A
Cree/Wolfspeed, Diode Silicon Carbide Schottky 650V 39A (DC) Through Hole TO-220-2, Z-Rec®
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